A Comparison of Top Distributed Bragg Reflector for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers Based on III–V Compound

DOI: https://doi.org/10.14500/aro.10846
Keywords: Vertical cavity semiconductor optical amplifiers, distributed Bragg reflector, abrupt and grading distributed Bragg reflector

Abstract

In this work, the design of GaAs/AlGaAs distributed Bragg reflector (DBR) has been implemented for 1300 nm vertical cavity semiconductor optical amplifiers (VCSOAs) for optical fiber communication applications. The top DBR period and Al concentration are varied, the peak reflectivity of the DBR is increasing from 50% to 97.5% for 13 periods with increasing Al concentration, whereas the reflectivity bandwidth is increased to almost 190 nm. The relation between wavelength and incidence angle variation on DBR reflectivity is increasing with the incident angle (0°, 20°, 30°, and 50°), the resonant wavelength and bandwidth of the measured reflectance spectra shifts to shorter wavelength and wider bandwidth, respectively. In addition, a comparison between the linear, the graded, and the parabolic DBRs has been achieved with transfer matrix method using MATLAB software to show the influence of layer in DBRs and its effect on lasing wavelength. It is shown that using grading DBR mirror is much more beneficial compared to abrupt DBR, whereas it has lower reflectivity of almost 10% due to VCSOAs device which needs less number of top layers until prevent reaching lasing threshold.

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Author Biography

Shawbo A. Abubaker, Department of Physics, Faculty of Science and Health, Koya University, Koya KOY45, Kurdistan Region-F.R. Iraq

Shawbo Abdulsamad Abubaker is an assistant Lecturer at the Department of Physics, Faculty of science and Health, Koya University. She got the B.Sc. degree in physics and the M.Sc. degree in Laser Physics. Her research interests are in Laser physics and Semeconductor Devices .

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ARO Journal: Volume 9, No. 2 (2021)
Published
2021-10-28
How to Cite
Abubaker, S. A. (2021) “A Comparison of Top Distributed Bragg Reflector for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers Based on III–V Compound”, ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY, 9(2), pp. 26-29. doi: 10.14500/aro.10846.
Issue
Vol. 9 No. 2 (2021): Issue Seventeen
Section
Articles

Copyright (c) 2021 Shawbo A. Abubaker

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